![]() ![]() Colinge, Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. In similar way the electron concentration along the length of channel is shown. The surface potential for different dielectric materials for a fixed channel length and variation of surface potential for different channel lengths in a fixed dielectric materials is shown. These structures have shown considerably better performance in nanometer scale. The new devices to control these challenges is needed and thus a non planar multigate structures are emerged. Therefore various challenges are invoked in nanometer scale. The performance parameters for bulk MOSFET is poor as the transistors on integrated circuit is increasing. ![]() This paper presents 2D ATLAS simulation of high- K gate dielectric engineered Double gate metal oxide field effect transistor (DGMOSFET). These are thought to aid Moore’s law and scaling of transistors to next decade and continue improvement in computer performance. Several advanced MOSFETs like Multigate transistors (Double gate, triple gate, Gate all around), Junctionless transistors and Tunnel FETs are proposed recently. With scaling, the characteristics of devices are also degraded. This potential of increase in number of transistors on chip is achieved by scaling of Metal oxide semiconductor field effect transistor (MOSFET). As transistor size is shrinked exponentially, there is an exponential increase in number of transistors on a chip. With respect to semiconductor industry, Complementary metal oxide semiconductor is considered to be successful because of integration in Integrated Circuits (ICs). ![]()
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